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Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
Channel-1
Channel-2
V DS (V)
30
R DS(on) ( Ω )
0.022 at V GS = 10 V
0.030 at V GS = 4.5 V
0.0155 at V GS = 10 V
0.0205 at V GS = 4.5 V
I D (A)
6.3
5.4
9.5
8.2
? Halogen-free According to IEC 61249-2-21
Definition
? LITTLE FOOT ? Plus
? Compliant to RoHS directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V SD (V)
V DS (V)
30
Diode Forward Voltage
0.50 V at 1.0 A
I F (A)
2.0
SO-8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 2
S 2
3
6
D 2
G 1
G 2
Schottky Diode
G 2
4
5
D 2
Top View
S 1
S 2
A
Ordering Information: Si4818DY-T1-E3 (Lead (Pb)-free)
Si4818DY -T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 1
MOSFET
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Channel-1
Channel-2
Parameter
Symbol
10 s
Steady State
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
30
20
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
6.3
5.4
30
5.3
4.2
9.5
7.6
40
7.0
5.6
A
Continuous Source Current (Diode Conduction) a
I S
1.3
0.9
2.2
1.15
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
1.4
0.9
1.0
0.64
2.4
1.5
1.25
0.80
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
72
100
51
90
125
63
43
82
25
53
100
30
48
80
28
60
100
35
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71122
S09-0867-Rev. C, 18-May-09
www.vishay.com
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